1 April 2011 Light-shield border impact on the printability of extreme-ultraviolet mask
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 10(2), 023001 (2011). doi:10.1117/1.3574117
When a thinner absorber mask is applied to extreme ultraviolet (EUV) lithography for chip production, it becomes essential to a introduce light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. In this paper, we evaluate the leakage of both EUV and out-of-band from light-shield border and clarify the dependence of lithographic performance on light-shield border structure using a small field exposure tool with/without spectral purify filter (SPF). Then we evaluate the lithographic performance of a thin absorber EUV mask with light-shield border of the etched multilayer type and demonstrate the merit of its structure using a full-field scanner operating under the currently employed condition of EUV source in which SPF is not installed.
Takashi Kamo, Kazuo Tawarayama, Yuusuke Tanaka, Yukiyasu Arisawa, Hajime Aoyama, Toshihiko Tanaka, Osamu Suga, "Light-shield border impact on the printability of extreme-ultraviolet mask," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(2), 023001 (1 April 2011). https://doi.org/10.1117/1.3574117


Extreme ultraviolet lithography

Extreme ultraviolet



Deep ultraviolet



Fast 3D thick mask model for full-chip EUVL simulations
Proceedings of SPIE (April 01 2013)
Vote taking for EUV lithography a radical approach to...
Proceedings of SPIE (March 24 2017)
EUVL: transition from research to commercialization
Proceedings of SPIE (August 28 2003)
EUVL: towards implementation in production
Proceedings of SPIE (December 10 2009)
EUV lithography with the Alpha Demo Tools status and...
Proceedings of SPIE (March 13 2007)

Back to Top