1 April 2011 Light-shield border impact on the printability of extreme-ultraviolet mask
Author Affiliations +
When a thinner absorber mask is applied to extreme ultraviolet (EUV) lithography for chip production, it becomes essential to a introduce light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. In this paper, we evaluate the leakage of both EUV and out-of-band from light-shield border and clarify the dependence of lithographic performance on light-shield border structure using a small field exposure tool with/without spectral purify filter (SPF). Then we evaluate the lithographic performance of a thin absorber EUV mask with light-shield border of the etched multilayer type and demonstrate the merit of its structure using a full-field scanner operating under the currently employed condition of EUV source in which SPF is not installed.
© (2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Takashi Kamo, Takashi Kamo, Kazuo Tawarayama, Kazuo Tawarayama, Yuusuke Tanaka, Yuusuke Tanaka, Yukiyasu Arisawa, Yukiyasu Arisawa, Hajime Aoyama, Hajime Aoyama, Toshihiko Tanaka, Toshihiko Tanaka, Osamu Suga, Osamu Suga, } "Light-shield border impact on the printability of extreme-ultraviolet mask," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(2), 023001 (1 April 2011). https://doi.org/10.1117/1.3574117 . Submission:


Fast 3D thick mask model for full-chip EUVL simulations
Proceedings of SPIE (March 31 2013)
Impact of an etched EUV mask black border on imaging...
Proceedings of SPIE (October 02 2013)
Vote taking for EUV lithography a radical approach to...
Proceedings of SPIE (March 23 2017)
EUVL: transition from research to commercialization
Proceedings of SPIE (August 27 2003)
Overview of extreme ultraviolet lithography
Proceedings of SPIE (December 06 1994)

Back to Top