1 April 2011 Light-shield border impact on the printability of extreme-ultraviolet mask
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Abstract
When a thinner absorber mask is applied to extreme ultraviolet (EUV) lithography for chip production, it becomes essential to a introduce light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. In this paper, we evaluate the leakage of both EUV and out-of-band from light-shield border and clarify the dependence of lithographic performance on light-shield border structure using a small field exposure tool with/without spectral purify filter (SPF). Then we evaluate the lithographic performance of a thin absorber EUV mask with light-shield border of the etched multilayer type and demonstrate the merit of its structure using a full-field scanner operating under the currently employed condition of EUV source in which SPF is not installed.
© (2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Takashi Kamo, Takashi Kamo, Kazuo Tawarayama, Kazuo Tawarayama, Yuusuke Tanaka, Yuusuke Tanaka, Yukiyasu Arisawa, Yukiyasu Arisawa, Hajime Aoyama, Hajime Aoyama, Toshihiko Tanaka, Toshihiko Tanaka, Osamu Suga, Osamu Suga, } "Light-shield border impact on the printability of extreme-ultraviolet mask," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(2), 023001 (1 April 2011). https://doi.org/10.1117/1.3574117 . Submission:
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