1 April 2011 Measurement of critical dimension in scanning electron microscope mask images
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Abstract
In semiconductor industries, controlling and measuring critical dimensions are two important tools to design masks. However, measuring the dimensions with physical tools becomes more challenging, and the traditional method of measuring is slow and has many processes though it is accurate. This paper suggests a method that accurately measures the critical dimension length in a short time based on the digital image processing.
© (2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Wonsuk Lee, Wonsuk Lee, Sang Hyun Han, Sang Hyun Han, Hong Jeong, Hong Jeong, } "Measurement of critical dimension in scanning electron microscope mask images," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(2), 023003 (1 April 2011). https://doi.org/10.1117/1.3574771 . Submission:
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