1 October 2011 Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography
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Abstract
In this study, a simple technique was introduced for the fabrication of nanogap electrodes by using nano-oxidation scanning probe microscopy lithography with a Cr/Pt coated silicon tip. Silicon electrodes with a gap of sub-31 nm were fabricated successfully by this technique. The current-voltage measurements (I-V) of the electrodes demonstrated excellent insulating characteristics. This technique is simple, controllable, inexpensive, and faster than common methods. The results showed that silicon electrodes have a great potential for the fabrication of single molecule transistors, single electron transistors, and other nanoelectronic devices.
© (2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jalal Rouhi, Shahrom Mahmud, Sabar D. Hutagalung, Saeid Kakooei, "Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(4), 043002 (1 October 2011). https://doi.org/10.1117/1.3643480 . Submission:
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