29 June 2012 Development of stable extreme-ultraviolet sources for use in lithography exposure systems
Author Affiliations +
Laser-produced plasma sources offer the best option for scalability to support high-throughput lithography. Challenges associated with the complexity of such a source are being addressed in a pilot program where sources have been built and integrated with extreme-ultraviolet (EUV) scanners. Up to now, five pilot sources have been installed at R&D facilities of chip manufacturers. Two pilot sources are dedicated to product development at our facility, where good dose stability has been demonstrated up to levels of 32 W of average EUV power. Experimental tests on a separate experimental system using a laser prepulse to optimize the plasma conditions or EUV conversion show power levels equivalent to approximately 160 W within a low duty-cycle burst, before dose control is applied. The overall stability of the source relies on the generation of Sn droplet targets and large EUV collector mirrors. Stability of the Sn droplet stream is well below 1 μm root mean square during 100+  h of testing. The lifetime of the collector is significantly enhanced with improved coatings, supporting uninterrupted operation for several weeks.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Igor V. Fomenkov, Igor V. Fomenkov, Bruno La Fontaine, Bruno La Fontaine, Daniel J. Brown, Daniel J. Brown, Imtiaz Ahmad, Imtiaz Ahmad, Peter Baumgart, Peter Baumgart, Norbert R. Bowering, Norbert R. Bowering, David C. Brandt, David C. Brandt, Alexander N. Bykanov, Alexander N. Bykanov, Silvia De Dea, Silvia De Dea, Alex I. Ershov, Alex I. Ershov, Nigel R. Farrar, Nigel R. Farrar, Daniel J. Golich, Daniel J. Golich, Michael J. Lercel, Michael J. Lercel, David W. Myers, David W. Myers, Chirag Rajyaguru, Chirag Rajyaguru, Shailendra Srivastava, Shailendra Srivastava, Yezheng Tao, Yezheng Tao, Georgiy O. Vaschenko, Georgiy O. Vaschenko, } "Development of stable extreme-ultraviolet sources for use in lithography exposure systems," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(2), 021110 (29 June 2012). https://doi.org/10.1117/1.JMM.11.2.021110 . Submission:


Development of the ASML EUV alpha demo tool
Proceedings of SPIE (May 05 2005)
LPP source system development for HVM
Proceedings of SPIE (April 06 2011)
EUVL: towards implementation in production
Proceedings of SPIE (December 09 2009)
EUVL system: moving towards production
Proceedings of SPIE (March 17 2009)
LPP EUV source development for HVM
Proceedings of SPIE (March 18 2007)

Back to Top