3 May 2012 Atomic-hydrogen cleaning of Sn from Mo/Si and DLC/Si extreme ultraviolet multilayer mirrors
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Abstract
We have investigated the use of atomic-hydrogen-based cleaning to remove Sn contamination from extreme ultraviolet (EUV) multilayer mirrors. Mo and Si surfaces were cleaned at a relatively slow rate due to catalyzed dissociation of tin hydride on these surfaces. Mo/Si mirrors with B4C and Si3N4 cap layers and DLC-terminated DLC/Si mirrors showed complete removal of 10 nm Sn in 20 sec with full restoration of EUV reflectance. In addition, a prolonged cleaning treatment of 300 sec of a DLC/Si mirror resulted in only a minor EUV peak reflection loss of 1.2% absolute and no significant changes in infrared reflectance.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Wouter A. Soer, Maarten M.J.W. van Herpen, Martin J. Jak, Peter Gawlitza, Stefan Braun, Nikolay N. Salashchenko, Vadim Y. Banine, "Atomic-hydrogen cleaning of Sn from Mo/Si and DLC/Si extreme ultraviolet multilayer mirrors," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(2), 021118 (3 May 2012). https://doi.org/10.1117/1.JMM.11.2.021118 . Submission:
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