10 May 2012 Extreme ultraviolet lasers: principles and potential for next-generation lithography
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Abstract
Extreme ultraviolet (EUV) lasers in the wavelength range of ~ 10 to 20 nm have matured to a point where dedicated applications such as at-wavelength inspection of extreme-ultraviolet lithography (EUVL) masks become possible on the laboratory scale. The authors briefly review the principles of plasma-based EUV lasers, the progress made so far, and the output characteristics of interest to the EUVL community.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Juerg E. Balmer, Juerg E. Balmer, Davide Bleiner, Davide Bleiner, Felix Staub, Felix Staub, } "Extreme ultraviolet lasers: principles and potential for next-generation lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(2), 021119 (10 May 2012). https://doi.org/10.1117/1.JMM.11.2.021119 . Submission:
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