1 June 2012 Experimental analysis of pattern line width in digital maskless lithography
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We study the distributions of line/space (L/S) patterns based on exposure dose variation using point array techniques (a type of digital maskless lithography). The intensity distributions of L/S patterns were simulated using the point array technique, and the pattern profiles were obtained by applying the effect of the photoresist contrast to the intensity distribution. As the dose increased, line width also increased. An experiment was performed to verify the simulation results. The minimum line widths of the L/S patterns were about 3.44 and 3.89 μm at laser power levels of 100% and 60%, respectively. The standard deviations of the line widths were 0.28 and 0.03 μm at the 4 and 13 μm L/S patterns, respectively.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Hoonchul Ryoo, Hoonchul Ryoo, Dong Won Kang, Dong Won Kang, Jae W. Hahn, Jae W. Hahn, Yo-Tak Song, Yo-Tak Song, } "Experimental analysis of pattern line width in digital maskless lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(2), 023004 (1 June 2012). https://doi.org/10.1117/1.JMM.11.2.023004 . Submission:


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