5 June 2012 Time-dependent electron-beam-induced photoresist shrinkage effects
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Abstract
We explore how photoresist shrinkage behavior due to e-beam measurement by critical dimension-scanning electron microscope (CD-SEM) depends on various time-related factors. This will include an investigation of how the photoresist critical dimension (CD) and CD shrinkage varies with photoresist age and the differences in shrinkage trends between load/unload and static and dynamic repeatability cases, where time between measurements is a key variable. The results for this typical immersion argon flouride photoresist process will show that resist CD and shrinkage variation due to resist age and vacuum-cycling is insignificant, yet the shrinkage is strongly linked to time between consecutive measurements, with a well-defined, high-certainty logarithmic decay with time. These experiments identify a key difference between the shrinkage seen in static versus dynamic measurements, which will be shown to have far-reaching implications for the shrinkage phenomenon in general and for the best-known methods for executing CD-SEM metrology with photoresist samples.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Benjamin D. Bunday, Benjamin D. Bunday, Aaron Cordes, Aaron Cordes, Carsten Hartig, Carsten Hartig, John A. Allgair, John A. Allgair, Alok Vaid, Alok Vaid, Eric Solecky, Eric Solecky, Narender Rana, Narender Rana, } "Time-dependent electron-beam-induced photoresist shrinkage effects," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(2), 023007 (5 June 2012). https://doi.org/10.1117/1.JMM.11.2.023007 . Submission:
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