9 July 2012 Nanopatterning of diblock copolymer directed self-assembly lithography with wet development
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Abstract
A method for using wet development in a directed self-assembly lithography (DSAL) application is reported. For the typical diblock copolymer poly(styrene-block-methyl methacrylate) (PS-b-PMMA), the PMMA area is removed by an oxygen plasma. However, the oxygen plasma has poor selectivity for the PS portion of the block polymer and etches it simultaneously. As a result, the thickness of the residual PS pattern is thinner than desired and creates a challenge for subsequent pattern transfer. A wet development technique is discussed which offers higher selectivity between the PMMA and PS blocks in the assembled pattern. Specifically, a method using a low pressure mercury lamp and conventional tetramethylammonium hydroxide (TMAH, 2.38%) developer is proposed. Using this method, DSA pattern formation is completed in a single track having coating, baking, exposure, and development modules.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE)
Makoto Muramatsu, Mitsuaki Iwashita, Takahiro Kitano, Takayuki Toshima, Mark H. Somervell, Yuriko Seino, Daisuke Kawamura, Masahiro Kanno, Katsutoshi Kobayashi, Tsukasa Azuma, "Nanopatterning of diblock copolymer directed self-assembly lithography with wet development," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(3), 031305 (9 July 2012). https://doi.org/10.1117/1.JMM.11.3.031305 . Submission:
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