Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects

Jenah Harris-Jones; Emilio Stinzianni; Chihcheng Lin; Vibhu Jindal; Ranganath Teki; Hyuk Joo Kwon

doi:10.1117/1.JMM.12.1.013007

6 February 2013 Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects

Jenah Harris-Jones, Emilio Stinzianni, Chihcheng Lin, Vibhu Jindal, Ranganath Teki, Hyuk Joo Kwon

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 12, Issue 1, 013007 (February 2013). https://doi.org/10.1117/1.JMM.12.1.013007

Abstract

Characterization of defects and their sources is essential for developing mitigation solutions to support the production of defect-free extreme ultraviolet (EUV) mask blanks. The characterization of sub-100-nm defects pose challenges to the conventional metrology techniques, such as atomic force microscopy and scanning electron microscopy, limiting mitigation of nanoscale defects. SEMATECH’s Mask Blank Development Center houses advanced metrology capabilities that include transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) to address these shortcomings. Scanning TEM was used to study the disruption of the Mo/Si multilayer of phase defects and to perform elemental analysis with energy dispersive x-ray spectroscopy that has supported projects including substrate smoothing activities, deposition simulation development, and defect printability studies. The Auger instrument was used to create elemental maps for defect identification and to characterize the ion beam deposition tool. Using advanced metrology, mitigation of small defects is being realized, yielding mask blanks with defect counts as low as eight defects at 50-nm sensitivity (Lasertec M7360 SiO₂ sphere equivalent) measured over the quality area of 132×132 mm² . The issues with the metrology of increasingly small EUV mask blank defects will be outlined, and comprehensive defect characterization results using TEM and AES will be presented.

Citation Download Citation

Jenah Harris-Jones, Emilio Stinzianni, Chihcheng Lin, Vibhu Jindal, Ranganath Teki, and Hyuk Joo Kwon "Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(1), 013007 (6 February 2013). https://doi.org/10.1117/1.JMM.12.1.013007

Published: 6 February 2013

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available