11 February 2013 Areal electron beam lithography using a magnetic reticle
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Abstract
We propose an electron beam lithography system that would allow for pattern transfer from a magnetic reticle to a wafer. The reticle consists of a patterned magnetic media where magnetization of a nanomagnet stores a value of a pixel. Information stored on this media is transferred as a pattern onto the electron-resist via spin-polarized electrons photo-generated from the reticle and spin-filtered along the way to the wafer to generate contrast. It is speculated that such a system offers significantly higher throughput than a multielectron-beam lithography system and may outpace in flexibility, cost and throughput extreme ultra-violet-lithography systems that are currently being developed, while at least matching the resolution of both lithography systems.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Aleksandar Aleksov, Aleksandar Aleksov, Dmitri E. Nikonov, Dmitri E. Nikonov, Shawna M. Liff, Shawna M. Liff, } "Areal electron beam lithography using a magnetic reticle," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(1), 013010 (11 February 2013). https://doi.org/10.1117/1.JMM.12.1.013010 . Submission:
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