1 March 2013 Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach
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Abstract
This paper presents the extension of the well-established, rigorous, electromagnetic field solver waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects. The new simulation method uses a rigorously computed multilayer defect data base in combination with on demand modeling of diffraction from absorber structures. Typical computation times are in the range of seconds to a few minutes. Selected simulation examples, including a defect printing exploration and a defect repair, demonstrate the functionality and the capability to perform fast, highly accurate, and flexible EUV multilayer defect computations.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Peter Evanschitzky, Peter Evanschitzky, Feng Shao, Feng Shao, Andreas Erdmann, Andreas Erdmann, } "Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(2), 021005 (1 March 2013). https://doi.org/10.1117/1.JMM.12.2.021005 . Submission:
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