18 March 2013 Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography
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As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of the overall EUV CDU contribution helps deliver an accurate and integral CDU BB per product/process and litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps extend the limits of Moore’s Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Peter Nikolsky, Peter Nikolsky, Chris Strolenberg, Chris Strolenberg, Rasmus B. Nielsen, Rasmus B. Nielsen, Tjitte Nooitgedacht, Tjitte Nooitgedacht, Natalia V. Davydova, Natalia V. Davydova, Greg Yang, Greg Yang, Shawn H. Lee, Shawn H. Lee, Chang-Min Park, Chang-Min Park, Insung Kim, Insung Kim, Jeongho Yeo, Jeongho Yeo, } "Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(2), 021006 (18 March 2013). https://doi.org/10.1117/1.JMM.12.2.021006 . Submission:

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