26 April 2013 Step flow model in continuous cellular automata method for simulation of anisotropic etching of silicon
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Abstract
A continuous cellular automaton (CCA) is presented for the simulation of anisotropic wet chemical etching in the fabrication of microstructures. Based on the step-flow model, the surface atoms are divided into categories according to the atom configurations on different crystal planes. An analytical solution for the dependence of the etch rate on orientation is derived, and the CCA approach makes a direct conversion of experimental macroscopic rates into calibrated microscopic parameters for realistic and reliable simulations. The presented model has been extended to a simulation system based on a CCA method. Linear search and variable time stepping are used to simulate a silicon wafer in various etching condition and mask shapes. The simulation results agree well with the experiments. This improved CCA makes possible for the realization of accurate simulations of anisotropic etching in engineering applications.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Mohamad Amin Rezvankhah, Mohamad Amin Rezvankhah, Mohsen Shayan, Mohsen Shayan, Amir Reza Merati, Amir Reza Merati, Mohsen Pahlevani, Mohsen Pahlevani, } "Step flow model in continuous cellular automata method for simulation of anisotropic etching of silicon," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(2), 023004 (26 April 2013). https://doi.org/10.1117/1.JMM.12.2.023004 . Submission:
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