4 September 2013 Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning
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Abstract
The approach for patterning 15-nm half-pitch (HP) structures using extreme ultraviolet lithography combined with self-aligned double patterning is discussed. A stack composed of a double hard mask, which allows decoupling photoresist transfer and trim, and an α-Si mandrel, which offers better mechanical properties during the mandrel and spacer patterning, is proposed. A break-down study with the patterning steps was performed to investigate the key contributors for improvement of linewidth roughness (LWR), line-edge roughness (LER), and critical dimension uniformity (CDU), targeting integrated solutions with lithography, etch, thin film deposition, and wet cleans for selected applications. Based on the optimization of these key patterning contributors, optimum LWR, LER, and CDU at 15 nm HP are demonstrated.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Kaidong Xu, Laurent Souriau, David Hellin, Janko Versluijs, Patrick Wong, Diziana Vangoidsenhoven, Nadia Vandenbroeck, Harold Dekkers, Xiaoping Shi, Johan Albert, Chi Lim Tan, Johan Vertommen, Bart Coenegrachts, Isabelle Orain, Yoshie Kimura, Vincent Wiaux, Werner Boullart, "Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(4), 041302 (4 September 2013). https://doi.org/10.1117/1.JMM.12.4.041302
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