2 October 2013 Extreme ultraviolet lithography resist-based aberration metrology
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Abstract
Extreme ultraviolet lithography (EUVL) at 13.5 nm is currently the most promising technology for advanced integrated circuit manufacturing nodes. Since the wavelength for EUVL is an order of magnitude smaller than current optical lithography systems (193 nm), aberration tolerances on lens manufacturing must be tightened to avoid image distortion and contrast loss as they scale with wavelength. Therefore, understanding the aberrations of an EUVL system both in idle and production conditions is paramount. This study aims to assess a photoresist-based aberration metrology technique for capturing pupil information of EUVL systems that can be implemented during full system use. Several datasets have been collected on a full-field EUVL system. Various one-dimensional and two-dimensional binary structures were imaged and used for pupil wave front extraction in conjunction with computational modeling and simulations. Results show a successful extraction of a stable aberration signature over several measurements, showing the method to be sensitive to subnanometer levels of intentional aberration change through lens manipulation.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
Germain L. Fenger, Germain L. Fenger, Lei Sun, Lei Sun, Sudharshanan Raghunathan, Sudharshanan Raghunathan, Obert R. Wood, Obert R. Wood, Bruce W. Smith, Bruce W. Smith, } "Extreme ultraviolet lithography resist-based aberration metrology," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(4), 043001 (2 October 2013). https://doi.org/10.1117/1.JMM.12.4.043001 . Submission:
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