6 November 2014 Hybrid metrology: from the lab into the fab
Alok Vaid, Alexander Elia, Givantha Iddawela, Cornel Bozdog, Matthew J. Sendelbach, Byungcheol Kang, Paul K. Isbester, Shay Wolfling
Author Affiliations +
Abstract
The accelerated pace of the semiconductor industry in recent years is putting a strain on existing dimensional metrology equipment (such as critical dimension-secondary electron microscopy, atomic force microscopy, scatterometry) to keep up with ever-increasing metrology challenges. However, a revolution appears to be forming with the recent advent of hybrid metrology (HM). We highlight some of the challenges and lessons learned when setting up a standard HM solution and describe the first-in-industry implementation of HM within a high-volume manufacturing environment.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2014/$25.00 © 2014 SPIE
Alok Vaid, Alexander Elia, Givantha Iddawela, Cornel Bozdog, Matthew J. Sendelbach, Byungcheol Kang, Paul K. Isbester, and Shay Wolfling "Hybrid metrology: from the lab into the fab," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(4), 041410 (6 November 2014). https://doi.org/10.1117/1.JMM.13.4.041410
Published: 6 November 2014
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CITATIONS
Cited by 14 scholarly publications and 1 patent.
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KEYWORDS
Line edge roughness

Metrology

Scatterometry

Data modeling

Semiconducting wafers

Critical dimension metrology

Photoresist materials

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