2 December 2013 Inverse e-beam lithography on photomask for computational lithography
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Computational lithography, e.g., inverse lithography technique (ILT) and source mask optimization, is considered necessary for the “extremely low k1” lithography process of sub-20 nm device node. The ideal design of a curvilinear mask for computational lithography requires many changes during photomask fabrication. These range from preparation of the mask data to measurement and inspection. The manufacturability of a photomask for computational lithography is linked to predictable and manageable quality of patterning. Here, we have proposed the use of “inverse e-beam lithography” on photomask for computational lithography, which overcomes the patterning accuracy limits of conventional e-beam lithography. Furthermore, the preferred target design for ILT, a new verification method, and the accuracy required for the mask model are also discussed; with consideration of acceptable writing time (<24  h ) and computing power.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Jin Choi, Jin Choi, Ji Soong Park, Ji Soong Park, In Kyun Shin, In Kyun Shin, Chan-Uk Jeon, Chan-Uk Jeon, } "Inverse e-beam lithography on photomask for computational lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(1), 011003 (2 December 2013). https://doi.org/10.1117/1.JMM.13.1.011003 . Submission:

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