Parallel with the introduction of EUV lithography, immersion lithography is being extended to the 14- and 10-nm node, and the lithography performance requirements need to be tightened further to enable this shrink. Next to generic scanner system improvements, application-specific solutions are needed to follow the requirements for critical dimension (CD) control and overlay. The application-specific solutions need a holistic optimization approach for the scanner, the mask, and the patterning process. We will describe the holistic lithography systems architecture that enables dynamic use of high-order scanner optimization based on advanced actuators of projection lens and scanning stages. Next to the scanner system, key components of this architecture are an angle-resolved scatterometer to measure CD, overlay, and focus, and an off-tool computation server to calculate application-specific recipes for the scanner. Based on real production wafer data, we will show the benefit for CD control, focus control, and overlay control, and demonstrate lithography performance levels required for 14- and 10-nm node production.