13 January 2014 Fabrication of resonator-quantum well infrared photodetector test devices
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J. of Micro/Nanolithography, MEMS, and MOEMS, 13(1), 013004 (2014). doi:10.1117/1.JMM.13.1.013004
An optimized detector fabrication process is developed for resonator-quantum well infrared photodetectors (R-QWIPs). The R-QWIPs are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). To achieve the expected performance, the detector geometry must be produced in precise specification. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniformly and accurately realized to within 0.05-μm accuracy. To achieve this specification, an optimized inductively coupled plasma etching process with a nearly infinite etching selectivity for the GaAs over the Alx Ga1−xAs etch-stop layer was developed. Using this etching technique, we have fabricated a number of R-QWIP test detectors with the required dimensions. Their QE spectra were tested to be in close agreement with the QE predictions.
© The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Jason Sun, Kwong-Kit Choi, Kimberley Olver, "Fabrication of resonator-quantum well infrared photodetector test devices," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(1), 013004 (13 January 2014). https://doi.org/10.1117/1.JMM.13.1.013004



Quantum efficiency

Infrared photography

Infrared radiation



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