19 May 2014 Line edge and width roughness smoothing by plasma treatment
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 13(2), 023006 (2014). doi:10.1117/1.JMM.13.2.023006
Smoothing effects of postlithography plasma treatments on 22-nm lines and spaces are evaluated for two types of extreme ultraviolet photoresists, using five different plasma processes (Ar, H 2 /Ar , HBr, H 2 /N 2 , and H 2 ). Experimental results indicate a reduction in linewidth roughness of about 10% by using an H 2 plasma smoothing process. This smoothing process is mainly triggered by the synergy of vacuum ultraviolet photons and H 2 reactive species during the plasma treatment. Moreover, the smoothing process is dependent on the resist composition and the pattern dimensions. This paper shows the impact of different plasma conditions on roughness reduction for 22-nm lines.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Peter De Schepper, Terje Hansen, Efrain Altamirano-Sanchez, Alessandro V. Pret, Ziad el Otell, Werner Boulart, Stefan De Gendt, "Line edge and width roughness smoothing by plasma treatment," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(2), 023006 (19 May 2014). https://doi.org/10.1117/1.JMM.13.2.023006


Photoresist materials

Plasma treatment

Line width roughness

Vacuum ultraviolet

Optical filters



Novel EUV resist materials for 7 nm node and beyond
Proceedings of SPIE (March 13 2018)
Intel's EUV resist development
Proceedings of SPIE (June 12 2003)
EUV resist outgassing: scaling to HVM intensity
Proceedings of SPIE (March 18 2009)

Back to Top