16 June 2014 Mask defect management in extreme-ultraviolet lithography
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We present a series of baseline techniques for inspection, cleaning, repair, and native defect mitigation of extreme ultraviolet (EUV) masks. Deep-ultraviolet inspectors are capable of inspecting patterns down to about 45 nm in pitch on wafer. Cleaning methods involving both chemical and physical forces have achieved good particle removal efficiency while minimizing absorber shrinkage and have realized 90% PRE in removing particles from the backside of an EUV mask. In addition, our compensation method for native defect repair has achieved partial success.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Nai-Ching Chen, Nai-Ching Chen, Chia-Hao Yu, Chia-Hao Yu, Ching-Fang Yu, Ching-Fang Yu, Chi-Lun Lu, Chi-Lun Lu, James Chu, James Chu, Luke T. Hsu, Luke T. Hsu, Angus S. Chin, Angus S. Chin, Anthony Yen, Anthony Yen, } "Mask defect management in extreme-ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(2), 023010 (16 June 2014). https://doi.org/10.1117/1.JMM.13.2.023010 . Submission:

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