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16 July 2014 Planarizing material for reverse-tone step and flash imprint lithography
Tsuyoshi Ogawa, B. Michael Jacobsson, Ryan Deschner, William K. Bell, Michael W. Lin, Yuji Hagiwara, Satoshi Takei, Makoto Hanabata, C. Grant Willson
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Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 13, Issue 3, 031302 (July 2014). https://doi.org/10.1117/1.JMM.13.3.031302
Abstract
Reverse-tone step and flash imprint lithography (S-FIL/R) requires materials that can be spin-coated onto patterned substrates with significant topography and that are highly planarizing. Ideally, these planarizing materials must contain silicon for etch selectivity, be UV or thermally curable, and have low viscosity and low volatility. One such unique material, in particular, a branched and functionalized siloxane (Si-12), is able to adequately satisfy the above requirements. This paper describes a study of the properties of epoxy functionalized Si-12 (epoxy-Si-12) as a planarizing layer. An efficient synthetic route to epoxy-Si-12 was successfully developed, which is suitable and scalable for an industrial process. Epoxy-Si-12 has a high silicon content (30.0%), low viscosity (29 cP at 25°C), and low vapor pressure (0.65 Torr at 25°C). A planarizing study was carried out using epoxy-Si-12 on trench patterned test substrates. The material showed excellent planarizing properties and met the calculated critical degree of planarization (critical DOP), which is a requirement for a successful etch process. An S-FIL/R process using epoxy-Si-12 was demonstrated using an Imprio® 100 (Molecular Imprints Inc., Austin, Texas) imprint tool. The results indicate that epoxy-Si-12 works very well as a planarizing layer for S-FIL/R.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Tsuyoshi Ogawa, B. Michael Jacobsson, Ryan Deschner, William K. Bell, Michael W. Lin, Yuji Hagiwara, Satoshi Takei, Makoto Hanabata, and C. Grant Willson "Planarizing material for reverse-tone step and flash imprint lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(3), 031302 (16 July 2014). https://doi.org/10.1117/1.JMM.13.3.031302
Published: 16 July 2014
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Cited by 4 scholarly publications and 2 patents.
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KEYWORDS
Etching
Ultraviolet radiation
Lithography
Silicon
Scanning electron microscopy
Coating
Industrial chemicals
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