15 September 2014 Combining metrology techniques for in-line control of thin SiGe:B layers
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Abstract
A study performed to evaluate the benefits of combining techniques to improve the overall metrology of thin silicon germanium (SiGe) epitaxial layers doped with boron is presented. A specifically designed set of wafers was processed and measured by different in-line metrology tools and characterization techniques. This study describes the best strategy for combining metrology techniques in order to reliably determine dopant concentration and Ge composition measurement of the layers. It demonstrates that combined metrology enables key improvements in manufacturing and engineering environments.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Delphine Le Cunff, Thomas Nguyen, Romain Duru, Francesco Abbate, Jonny Hoglund, Nicolas Laurent, Frederic Pernot, Matthew Wormington, "Combining metrology techniques for in-line control of thin SiGe:B layers," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(4), 041402 (15 September 2014). https://doi.org/10.1117/1.JMM.13.4.041402
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