1 October 2014 Addressing FinFET metrology challenges in 1× node using tilt-beam critical dimension scanning electron microscope
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Abstract
At 1× node, a three-dimensional (3-D) FinFET process raises a number of new metrology challenges for process control, including gate height and fin height. At present, there is a metrology gap in inline in-die measurement of these parameters. To fill this metrology gap, in-column beam tilt has been implemented on Applied Materials V4i+ critical dimension scanning electron microscope for height measurement. Low-tilt (5 deg) and high-tilt (14 deg) beam angles have been calibrated to obtain the height and the sidewall angle information. Evaluation of its feasibility and production worthiness is done with applications in both gate height and fin height measurements. Transmission electron microscope correlation with an R2 equal to 0.89 and a precision of 0.81 nm have been achieved on various in-die features in a gate height application. The initial fin height measurement shows less accuracy (R2 being 0.77) and precision (1.49 nm) due to greater challenges brought by the fin profile, yet it is promising for the first attempt. Sensitivity to design of experiment offset die-to-die and in-die variations is demonstrated in both gate height and fin height. The process defect is successfully captured with inline gate height measurement. This is the first successful demonstration of inline in-die gate height measurement for a 14-nm FinFET process control.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Xiaoxiao Zhang, Xiaoxiao Zhang, Hua Zhou, Hua Zhou, Zhenhua Ge, Zhenhua Ge, Alok Vaid, Alok Vaid, Deepasree Konduparthi, Deepasree Konduparthi, Carmen Osorio, Carmen Osorio, Stefano Ventola, Stefano Ventola, Roi Meir, Roi Meir, Ori Shoval, Ori Shoval, Roman Kris, Roman Kris, Ofer Adan, Ofer Adan, Maayan Bar-Zvi, Maayan Bar-Zvi, } "Addressing FinFET metrology challenges in 1× node using tilt-beam critical dimension scanning electron microscope," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(4), 041407 (1 October 2014). https://doi.org/10.1117/1.JMM.13.4.041407 . Submission:
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