21 October 2014 Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 13(4), 043003 (2014). doi:10.1117/1.JMM.13.4.043003
We report on our development strategy of photo-curable resists for nanoimprint lithography (NIL) based on modularity. Starting with a basic formulation, we address two topics: the integration of fluorinated additives and the enhancement of the dry etching stability. We prove both concepts by the introduction of two different resists derived from the same basic formulation. The viscosity of the novel resist materials was optimized for inkjet dispensing at room temperature (RT). The novel resist materials can be applied either in NIL batch processes or in high-throughput roller processes. Batch-wise imprints were performed on various substrates such as Si or plastics, demonstrating the distinctive application versatility of the novel materials. Dry etching of spin-coated thin films on Si wafers was performed, demonstrating an etch stability versus Si of 3.5:1 by using the resist formulation with improved etching stability. Roll-to-roll NIL at high throughput on large areas was performed with web speeds of up to 30  m min−1 with different stamp materials. We conclude that all resists reported herein can be deposited via inkjet dispensing at RT, are suitable for continuous high-throughput imprinting on flexible substrates, and are applicable in step-wise NIL processes with good etch resistance in dry etch processes.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Manuel W. Thesen, Dieter Nees, Stephan Ruttloff, Maximilian Rumler, Mathias Rommel, Florian Schlachter, Susanne Grützner, Marko Vogler, Arne Schleunitz, Gabi Grützner, "Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(4), 043003 (21 October 2014). http://dx.doi.org/10.1117/1.JMM.13.4.043003

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