6 November 2014 Resist toploss and profile modeling for optical proximity correction applications
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 13(4), 043010 (2014). doi:10.1117/1.JMM.13.4.043010
As critical dimensions decrease for 32-nm node and beyond, the resist loss increases and resist patterns become more vulnerable to etching failures. Traditional optical proximity correction (OPC) models only consider two-dimensional (XY) contours and neglect height (Z) variations. Rigorous resist simulators can simulate a three-dimensional (3-D) resist profile, but they are not fast enough for correction or verification on a full chip. However, resist loss for positive-tone resists is mainly driven by optical intensity variations, which are accurately modeled by the optical portion of an OPC model. We show that a compact resist model can be used to determine resist loss by properly selecting the optical image plane for calibration. The model can then be used to identify toploss hotspots on a full chip and, in some cases, for correction of these patterns. In addition, the article will show how the model can be made more accurate by accounting for some 3-D effects like diffusion through height.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Christian D. Zuniga, Yunfei Deng, "Resist toploss and profile modeling for optical proximity correction applications," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(4), 043010 (6 November 2014). https://doi.org/10.1117/1.JMM.13.4.043010


Resist profile modeling with compact resist model
Proceedings of SPIE (March 18 2015)
Resist toploss modeling for OPC applications
Proceedings of SPIE (March 31 2014)
Process induced bias a study of resist design and...
Proceedings of SPIE (April 04 2008)
Improvements in accuracy of dense OPC models
Proceedings of SPIE (October 17 2008)
Roadmap to sub-nanometer OPC model accuracy
Proceedings of SPIE (June 29 2012)

Back to Top