Investigation of resistive switching behavior of Ag/SnOx/ITO device

Da Chen; Shi-Hua Huang

doi:10.1117/1.JMM.14.2.024501

27 May 2015 Investigation of resistive switching behavior of Ag/SnO_x/ITO device

Da Chen, Shi-Hua Huang

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 2, 024501 (May 2015). https://doi.org/10.1117/1.JMM.14.2.024501

Abstract

SnO_x thin film was deposited by reactive magnetron sputtering and the resistance switching behavior of Ag/SnO_x/ITO was investigated. The endurance testing indicates that HRS resistance decreases with an increase in the number of cycles. After annealing, the memory performance is enhanced, and the ratio of the device resistance of HRS and LRS increases greatly. The abnormal transformation sequence from HRS to LRS was observed for the annealed device and can be explained by electron trapping and detrapping based on the analysis of x-ray diffraction and the Raman spectrum. The temperature-dependent I−V measurement indicates that the thermal activation process is responsible for the temperature range of 300 to 200 K; however, the carrier transport can be ascribed to the nearest-neighbor hopping conduction mechanism for the temperature range of 200 to 100 K. The general conduction mechanism of Ag/SnO_x/ITO device can be elucidated by the trap-controlled space charge limited conduction model, and the conductive schematic in the SET and RESET processes has been given.

Citation Download Citation

Da Chen and Shi-Hua Huang "Investigation of resistive switching behavior of Ag/SnO_x/ITO device," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(2), 024501 (27 May 2015). https://doi.org/10.1117/1.JMM.14.2.024501

Published: 27 May 2015

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