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9 April 2015 Sub-10-nm patterning process using directed self-assembly with high χ block copolymers
Naoko Kihara, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Teruaki Hayakawa, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Hideki Kanai, Yoshiaki Kawamonzen, Katsuyoshi Kodera, Tsukasa Azuma
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Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 2, 023502 (April 2015). https://doi.org/10.1117/1.JMM.14.2.023502
Abstract
The perpendicularly orientated lamellar structure of the self-organized diblock copolymer is an attractive template for sub-10-nm line-and-space pattern formation. We propose a method of evaluating the neutral layer (NL) whose performance has an important bearing on the perpendicular orientation of the lamellar structure. The random copolymer of methyl methacrylate and i-butyl POSS methacrylate (MAIBPOSS) has been investigated as an NL for a polymethylmethacrylate-b-polymethacrylethylPOSS (PMMA-b-PMAIBPOSS) lamellar structure. PMMA-b-PMAIBPOSS material has the potential to form sub-10 nm line-and-space pattern, in addition to high etch selectivity due to its POSS structure. Under the free surface, PMMA-b-PMAIBPOSS film on the random copolymer layer showed horizontal orientation. However, a half-pitch of a 7-nm finger pattern structure was observed by peeling off the horizontally oriented layer. The upper portion of the PMMA-b-PMAIBPOSS film was eliminated till proximity of the random copolymer layer by CF4 gas etching. From the result, it was revealed that the PMMA-r-PMAIBPOSS works as an NL. It was confirmed that the contact angle analysis using an appropriate polymer is a suitable method for evaluation of the surface energy performance of the copolymer with the attribute of high segregation energy.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Naoko Kihara, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Teruaki Hayakawa, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Hideki Kanai, Yoshiaki Kawamonzen, Katsuyoshi Kodera, and Tsukasa Azuma "Sub-10-nm patterning process using directed self-assembly with high χ block copolymers," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(2), 023502 (9 April 2015). https://doi.org/10.1117/1.JMM.14.2.023502
Published: 9 April 2015
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Cited by 6 scholarly publications.
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KEYWORDS
Directed self assembly
Etching
Polymethylmethacrylate
Optical lithography
Silicon
Polymers
Lithography
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