2 July 2015 Defect mitigation and root cause studies in 14 nm half-pitch chemo-epitaxy directed self-assembly LiNe flow
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Abstract
High-defect density in thermodynamics driven directed self-assembly (DSA) flows has been a major cause of concern for a while and several questions have been raised about the relevance of DSA in high-volume manufacturing. The major questions raised in this regard are: (1) What is the intrinsic level of DSA-induced defects? (2) Can we isolate the DSA-induced defects from the other processes-induced defects? (3) How much do the DSA materials contribute to the final defectivity and can this be controlled? (4) How can we understand the root causes of the DSA-induced defects and their kinetics of annihilation? (5) Can we have block copolymer anneal durations that are compatible with standard CMOS fabrication techniques (in the range of minutes) with low-defect levels? We address these important questions and identify the issues and the level of control needed to achieve a stable DSA defect performance.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Hari Pathangi, Hari Pathangi, Boon Teik Chan, Boon Teik Chan, Hareen Bayana, Hareen Bayana, Nadia Vandenbroeck, Nadia Vandenbroeck, Dieter Van den Heuvel, Dieter Van den Heuvel, Lieve Van Look, Lieve Van Look, Paulina Alejandra Rincon-Delgadillo, Paulina Alejandra Rincon-Delgadillo, Yi Cao, Yi Cao, JiHoon Kim, JiHoon Kim, Guanyang Lin, Guanyang Lin, Doni Parnell, Doni Parnell, Kathleen Nafus, Kathleen Nafus, Ryota Harukawa, Ryota Harukawa, Ito Chikashi, Ito Chikashi, Marco Polli, Marco Polli, Lucia D’Urzo, Lucia D’Urzo, Roel Gronheid, Roel Gronheid, Paul F. Nealey, Paul F. Nealey, } "Defect mitigation and root cause studies in 14 nm half-pitch chemo-epitaxy directed self-assembly LiNe flow," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 031204 (2 July 2015). https://doi.org/10.1117/1.JMM.14.3.031204 . Submission:
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