15 July 2015 Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition
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Abstract
To demonstrate the possibility of using electron beam-induced deposition (EBID) masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20- to 40-nm EBID masks, which were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine, and boron trichloride can selectively etch silicon when using 20- to 40-nm masks made by EBID. We observed an enhancement of the height ratio, i.e., the ratio of the height of structures before and after etching, up to a factor of 3.5 when using chlorine chemistry. To demonstrate the pattern transfer of sub-10 nm structures, further experiments were carried out using 8- to 20-nm EBID masks in combination with hydrogen bromide, chlorine, and fluorine chemistries. Fluorine chemistry provided the best results in terms of surface smoothness and height ratio. In this case, 7.4-nm lines were successfully transferred into silicon, resulting in 14.3-nm-wide lines with a height ratio of ∼5.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Marijke Scotuzzi, Martin J. Kamerbeek, Andy Goodyear, Mike Cooke, Cornelis W. Hagen, "Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 031206 (15 July 2015). https://doi.org/10.1117/1.JMM.14.3.031206 . Submission:
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