11 September 2015 Directed self-assembly graphoepitaxy template generation with immersion lithography
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We present an optimization methodology for the template designs of subresolution contacts using directed self-assembly (DSA) with graphoepitaxy and immersion lithography. We demonstrate the flow using a 60-nm-pitch contact design in doublet with Monte Carlo simulations for DSA. We introduce the notion of template error enhancement factor (TEEF) to gauge the sensitivity of DSA printing infidelity to template printing infidelity and evaluate optimized template designs with TEEF metrics. Our data show that source mask optimization and inverse lithography technology are critical to achieve sub-80 nm non-L0 pitches for DSA patterns using 193i.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2015/$25.00 © 2015 SPIE
Yuansheng Ma, Junjiang Lei, J. Andres-Torres, Le Hong, James Word, Germain L. Fenger, Alexander Tritchkov, George Lippincott, Rachit Gupta, Neal V. Lafferty, Yuan He, Joost P. Bekaert, and Geert Vanderberghe "Directed self-assembly graphoepitaxy template generation with immersion lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 031216 (11 September 2015). https://doi.org/10.1117/1.JMM.14.3.031216
Published: 11 September 2015

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