13 July 2015 Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication
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Abstract
Line edge roughness (LER) and line width roughness (LWR) are analyzed based on the frequency domain 3σ LER characterization methodology during pattern transfer in a self-aligned double patterning (SADP) process. The power spectrum of the LER/LWR is divided into three regions: low frequency, middle frequency, and high frequency regions. Three standard deviation numbers are used to characterize the LER/LWR in the three frequency regions. Pattern wiggling is also detected quantitatively during LER/LWR transfer in the SADP process.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Lei Sun, Lei Sun, Wenhui Wang, Wenhui Wang, Genevieve Beique, Genevieve Beique, Min G. Sung, Min G. Sung, Obert R. Wood, Obert R. Wood, Ryoung-Han Kim, Ryoung-Han Kim, } "Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 033501 (13 July 2015). https://doi.org/10.1117/1.JMM.14.3.033501 . Submission:
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