21 July 2015 Molecular dynamics simulation on selective etching of α-quartz and amorphous quartz substrate using low-energy argon ion bombardment model in dry etching process
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Abstract
We investigated the physical sputtering of low-energy argon bombardment onto α-quartz and amorphous quartz substrate using dynamics simulations. We reported the effects of etching selectivity, the effect of surface temperature, Ts, and the effect of incident energy, Ei on sputtering yield. The second generation charge-optimized many body (COMB10) potential was utilized to model the interatomic potential of quartz substrates. Simulations were conducted at incident energies of Ei=50, 100, and 150 eV and substrate temperatures of Ts=300, 500, and 800 K. α-quartz shows higher sputtering yield compared to amorphous quartz at any given incident energy, Ei and substrate temperature, Ts. α-quartz has also produced more stoichiometric yield compared to amorphous quartz.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Abdul Haadi Abdul Manap, Khairudin Mohamed, "Molecular dynamics simulation on selective etching of α-quartz and amorphous quartz substrate using low-energy argon ion bombardment model in dry etching process," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 033505 (21 July 2015). https://doi.org/10.1117/1.JMM.14.3.033505 . Submission:
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