11 September 2015 Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity
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Abstract
Requirements for control of critical dimension (CD) become more demanding as the integrated circuit (IC) feature size specifications become tighter and tighter. Critical dimension control, also known as CDC, is a well-known laser-based process in the IC industry that has proven to be robust, repeatable, and efficient in adjusting wafer CD uniformity (CDU) [
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Dan Avizemer, Dan Avizemer, Ofir Sharoni, Ofir Sharoni, Sergey Oshemkov, Sergey Oshemkov, Avi Cohen, Avi Cohen, Asaf Dayan, Asaf Dayan, Ranjan Khurana, Ranjan Khurana, Dave Kewley, Dave Kewley, } "Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 033510 (11 September 2015). https://doi.org/10.1117/1.JMM.14.3.033510 . Submission:
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