21 September 2015 Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation
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Abstract
High-sensitivity and low-noise extreme ultraviolet (EUV) mask pattern defect detection is one of the major issues remaining to be addressed in device fabrication using extreme ultraviolet lithography (EUVL). We have designed a projection electron microscopy (PEM) system, which has proven to be quite promising for half-pitch (hp) 16-nm node to hp 11-nm node mask inspection. The PEM system was integrated into a pattern inspection system for defect detection sensitivity evaluation. To improve the performance of hp 16-nm patterned mask defect detection toward hp 11-nm EUVL patterned mask, defect detection signal characteristics, which depend on hp 64-nm pattern image intensity deviation on EUVL mask, were studied. Image adjustment effect of the captured images for die-to-die defect detection was evaluated before the start of the defect detection image-processing sequence. Image correction of intrafield intensity unevenness and L/S pattern image contrast deviation suppresses the generation of false defects. Captured images of extrusion and intrusion defects in hp 64-nm L/S patterns were used for detection. Applying the image correction for defect detection, 12-nm sized intrusion defect, which was smaller than our target size for hp 16-nm defect detection requirements, was identified without false defects.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenji Terao, "Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 033512 (21 September 2015). https://doi.org/10.1117/1.JMM.14.3.033512 . Submission:
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