7 August 2015 Study on electrical parameter to nano thin-film transistor under GPa-order stress
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Nano thinfilm transistor (TFT) is fabricated at the root of a beam, which becomes the maximum stress area when the beam is bent. In this process, a probe is used to bend the beam and produce GPa-order mechanical stress. The electrical characteristic of TFT under different GPa stress has been studied. Threshold voltage VT, relative drain current change ΔIds/Ids, and transconductance gm present a nonlinear relationship with increasing GPa-order stress. Analyzed from experimental results, channel piezoresistivity effect below 1.82 GPa stress, energy valley splitting, large change of valence effective mass from 1.82 to 2.08 GPa, and interface effect above 2.08 GPa are the factors of nonlinear change of parameter with GPa-order mechanical stress.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Tieying Ma, Tieying Ma, Sen Yang, Sen Yang, Yidong Liu, Yidong Liu, Huiquan Wang, Huiquan Wang, } "Study on electrical parameter to nano thin-film transistor under GPa-order stress," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 035001 (7 August 2015). https://doi.org/10.1117/1.JMM.14.3.035001 . Submission:

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