7 October 2015 Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction
Author Affiliations +
Abstract
We report on out-of-band (OoB) radiation that can cause degradation to the image quality in extreme-ultraviolet (EUV) lithography systems. We investigated the effect of OoB radiation with an EUV pellicle and found the maximum allowable reflectivity of OoB radiation from the EUV pellicle that can satisfy certain criteria (i.e., the image critical dimension error, contrast, and normalized image log slope). We suggested a multistack EUV pellicle that can obtain a high EUV transmission, minimal reflectivity of OoB radiation, and sufficient deep ultraviolet transmission for defect inspection and alignment without removing the EUV pellicle in an EUV lithography system.
Sung-Gyu Lee, Guk-Jin Kim, In-Seon Kim, Jin-ho Ahn, Jin-Goo Park, Hye-Keun Oh, "Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(4), 043501 (7 October 2015). https://doi.org/10.1117/1.JMM.14.4.043501 . Submission:
JOURNAL ARTICLE
6 PAGES


SHARE
Back to Top