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10 December 2015 Fabrication of high-aspect ratio silicon nanopillars for tribological experiments
Pavlo V. Antonov, Marc R. Zuiddam, Joost W. M. Frenken
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Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 4, 044506 (December 2015). https://doi.org/10.1117/1.JMM.14.4.044506
Abstract
This article reports the results of the fabrication of large arrays of nanopillars for future tribological experiments. This fabrication focused on achieving a constant high aspect ratio up to 1∶24 and a separation between each pair of adjacent pillars. Electron beam lithography was used to write patterns in hydrogen silsesquioxane (HSQ) negative tone resist. To achieve nanopillars of high aspect ratios and with smooth sides, deep reactive ion etching was employed with SF6 and O2 at cryogenic temperatures. Finally, the residual HSQ was removed using CHF3/O2 plasma etching in order to obtain a smooth finish.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Pavlo V. Antonov, Marc R. Zuiddam, and Joost W. M. Frenken "Fabrication of high-aspect ratio silicon nanopillars for tribological experiments," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(4), 044506 (10 December 2015). https://doi.org/10.1117/1.JMM.14.4.044506
Published: 10 December 2015
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Cited by 12 scholarly publications.
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KEYWORDS
Etching
Silicon
Nanolithography
Deep reactive ion etching
Plasma etching
Cryogenics
Electron beam lithography
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