18 March 2016 Evaluation of multilayer defect repair viability and protection techniques for extreme ultraviolet masks
Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Zhengqing J. Qi, Jed H. Rankin, Shinji Akima
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Abstract
A variety of repairs were conducted on extreme ultraviolet (EUV) multilayer, including protection against pattern degradation in manufactural use, in order to evaluate feasibility of multilayer repair and subsequent protection schemes. The efficacy of postrepair protection techniques is evaluated to determine the lifetime of multilayer repairs. Simulations were used to select the optimal material thicknesses for repair protection, and the simulation results are verified with the lithographic results. The results showed a high correlation coefficient. Finally, all repaired sites were cleaned multiple times to quantify repair durability and impact on wafer critical dimension (CD). Aerial imaging of the repair sites before and after cleans showed a dramatic degradation of wafer CD. However, we show that applying a surface protection material after multilayer repair successfully mitigates the influence of multilayer degradation during extensive manufacturing operations.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2016/$25.00 © 2016 SPIE
Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Zhengqing J. Qi, Jed H. Rankin, and Shinji Akima "Evaluation of multilayer defect repair viability and protection techniques for extreme ultraviolet masks," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021010 (18 March 2016). https://doi.org/10.1117/1.JMM.15.2.021010
Published: 18 March 2016
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KEYWORDS
Extreme ultraviolet

Photomasks

Semiconducting wafers

Multilayers

Critical dimension metrology

Extreme ultraviolet lithography

Lithography

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