15 February 2016 Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks
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J. of Micro/Nanolithography, MEMS, and MOEMS, 15(2), 029801 (2016). doi:10.1117/1.JMM.15.2.029801
Abstract
This PDF file contains the errata for “JM3 Vol. 15 Issue 02 Paper JM3-2016-0202-ERR” for JM3 Vol. 15 Issue 02
John Qi, Rankin, Narita, and Kagawac: Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks

This article [J. Micro/Nanolith. MEMS MOEMS 15(2), 021005 (2016)] was originally published online on 2 February 2016 with an error in the author affiliations.

The correct affiliations are shown above.

All online versions of the article were corrected on 3 February 2016. The article appears correctly in print.

Zhengqing J. Qi, Jed H. Rankin, Eisuke Narita, Masayuki Kagawac, "Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 029801 (15 February 2016). http://dx.doi.org/10.1117/1.JMM.15.2.029801
Submission: Received ; Accepted
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Photomasks

Extreme ultraviolet lithography

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