26 July 2016 High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant
Andrew R. Dick, William K. Bell, Brendan Luke, Erin Maines, Brennen Mueller, Brandon Rawlings, Paul A. Kohl, C. Grant Willson
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Abstract
A photosensitive polyimide system based on amine catalyzed imidization of a precursor poly(amic ester) is described. The material is based on the meta ethyl ester of pyromellitic dianhydride and 2,2’ bis(trifluoromethyl)benzidine. It acts as a negative tone resist when formulated with a photobase generator. The material exhibits a dielectric constant of 3.0 in the gigahertz range, a coefficient of thermal expansion of 6±2  ppm/K, and can be patterned to aspect ratios of >2 when formulated with a highly quantum efficient cinnamide type photobase generator.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2016/$25.00 © 2016 SPIE
Andrew R. Dick, William K. Bell, Brendan Luke, Erin Maines, Brennen Mueller, Brandon Rawlings, Paul A. Kohl, and C. Grant Willson "High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 033503 (26 July 2016). https://doi.org/10.1117/1.JMM.15.3.033503
Published: 26 July 2016
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Cited by 5 scholarly publications.
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KEYWORDS
Dielectrics

Optical lithography

Polymers

Semiconducting wafers

Ultraviolet radiation

Silicon

Solids

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