19 January 2016 Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes
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A microaccelerometer based on gallium arsenide (GaAs) resonant-tunneling diodes (RTDs) is demonstrated. The input acceleration signal can be transformed into an output electrical signal using the meso-piezoresistive effects of the RTDs located at the root of the detection beams. Finite element simulations were performed to design, analyze, and optimize the structures of the accelerometer. The accelerometer was fabricated using a combination of GaAs IC surface and bulk micromachining techniques. Vibrating tests and shock tests were conducted to investigate the accelerometer characteristics. The experimental results revealed that the sensitivity of the RTD accelerometer was 7.91  mV/g. The noise resolution was ∼1.264  mg/√Hz, and the working frequency was up to 3 kHz.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Mengwei Li, Mengwei Li, Tao Deng, Tao Deng, Kang Du, Kang Du, WeiHang Chu, WeiHang Chu, Jun Liu, Jun Liu, Houjin Chen, Houjin Chen, Zewen Liu, Zewen Liu, } "Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(1), 015001 (19 January 2016). https://doi.org/10.1117/1.JMM.15.1.015001 . Submission:

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