1 February 2016 Printability of buried extreme ultraviolet lithography photomask defects
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Abstract
Native acting phase-programmed defects, otherwise known as buried program defects, with attributes very similar to native defects, were successfully fabricated using a high-accuracy overlay technique. The defect detectability and visibility were analyzed with conventional amplitude and phase-contrast blank inspection at 193-nm wavelength, pattern inspection at 193-nm wavelength, and scanning electron microscopy. The mask was also printed on wafer, and printability is discussed. Finally, the inspection sensitivity and wafer printability are compared, leading to the observation that the current blank- and pattern-inspection sensitivity is not enough to detect all of the printable defects.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2016/$25.00 © 2016 SPIE
Kazunori Seki, Takeshi Isogawa, Masayuki Kagawa, Shinji Akima, Yutaka Kodera, Karen D. Badger, Zhengqing John Qi, Mark Lawliss, Jed H. Rankin, and Ravi K. Bonam "Printability of buried extreme ultraviolet lithography photomask defects," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021004 (1 February 2016). https://doi.org/10.1117/1.JMM.15.2.021004
Published: 1 February 2016
JOURNAL ARTICLE
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