27 April 2016 Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond
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Abstract
In a previous work, we demonstrated that the current optical proximity correction model assuming the mask pattern to be analogous to the designed data is no longer valid. An extreme case of line-end shortening shows a gap up to 10 nm difference (at mask level). For that reason, an accurate mask model has been calibrated for a 14-nm logic gate level. A model with a total RMS of 1.38 nm at mask level was obtained. Two-dimensional structures, such as line-end shortening and corner rounding, were well predicted using scanning electron microscopy pictures overlaid with simulated contours. The first part of this paper is dedicated to the implementation of our improved model in current flow. The improved model consists of a mask model capturing mask process and writing effects, and a standard optical and resist model addressing the litho exposure and development effects at wafer level. The second part will focus on results from the comparison of the two models, the new and the regular.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Nacer Zine El Abidine, Nacer Zine El Abidine, Frank Sundermann, Frank Sundermann, Emek Yesilada, Emek Yesilada, Vincent Farys, Vincent Farys, Frederic Huguennet, Frederic Huguennet, Ana-Maria Armeanu, Ana-Maria Armeanu, Ingo Bork, Ingo Bork, Michael Chomat, Michael Chomat, Peter Buck, Peter Buck, Isabelle Schanen, Isabelle Schanen, } "Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021011 (27 April 2016). https://doi.org/10.1117/1.JMM.15.2.021011 . Submission:
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