16 February 2016 Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners
Author Affiliations +
Abstract
The physical process of mask manufacturing produces absorber geometry with significant deviations from the 90-deg corners, which are typically assumed in the mask design. The non-Manhattan mask geometry is an essential contributor to the aerial image and resulting patterning performance through focus. Current state-of-the-art models for corner rounding employ “chopping” a 90-deg mask corner, replacing the corner with a small 45-deg edge. A methodology is presented to approximate the impact of three-dimensional (3-D) EMF effects introduced by corners with rounded edges. The approach is integrated into a full-chip 3-D mask simulation methodology based on the domain decomposition method with edge to edge crosstalk correction.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Michael C. Lam, Michael C. Lam, Chris Clifford, Chris Clifford, Mike Oliver, Mike Oliver, David Fryer, David Fryer, Edita Tejnil, Edita Tejnil, Kostas Adam, Kostas Adam, } "Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021204 (16 February 2016). https://doi.org/10.1117/1.JMM.15.2.021204 . Submission:
JOURNAL ARTICLE
9 PAGES


SHARE
RELATED CONTENT


Back to Top