1 March 2016 Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 15(2), 021205 (2016). doi:10.1117/1.JMM.15.2.021205
The mask plays a significant role as an active optical element in lithography, for both deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Mask-induced and feature-dependent shifts of the best-focus position and other aberration-like effects were reported both for DUV immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively. Several strategies to compensate the mask-induced phase effects are discussed.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Graeupner, "Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021205 (1 March 2016). https://doi.org/10.1117/1.JMM.15.2.021205


Deep ultraviolet

Extreme ultraviolet


Extreme ultraviolet lithography

Refractive index



Mask-induced best-focus-shifts in DUV and EUV lithography
Proceedings of SPIE (March 18 2015)
Mask diffraction analysis and optimization for EUV masks
Proceedings of SPIE (March 18 2009)
Asymmetry and thickness effects in reflective EUV masks
Proceedings of SPIE (June 16 2003)
EUV phase-shifting masks and aberration monitors
Proceedings of SPIE (July 01 2002)
EUV mask: detection studies with Aera2
Proceedings of SPIE (April 20 2010)

Back to Top