13 September 2016 Virtual fabrication using directed self-assembly for process optimization in a 14-nm dynamic random access memory
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Abstract
For directed self-assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of self-aligned quadruple patterning with Liu–Nealey chemoepitaxy on a 14-nm dynamic random access memory (DRAM) process. To quantify the impact of this module replacement, we investigated a key process yield metric for DRAM, interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell’s hexagonally packed capacitors patterned with an array of diblock copolymer cylinders in place of fourfold litho-etch (LE4) patterning.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Mattan Kamon, Mustafa B. Akbulut, Yiguang Yan, Daniel Faken, Andras Pap, Vasanth Allampalli, Ken Greiner, David M. Fried, "Virtual fabrication using directed self-assembly for process optimization in a 14-nm dynamic random access memory," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 031605 (13 September 2016). https://doi.org/10.1117/1.JMM.15.3.031605 . Submission:
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