13 September 2016 Virtual fabrication using directed self-assembly for process optimization in a 14-nm dynamic random access memory
Author Affiliations +
Abstract
For directed self-assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of self-aligned quadruple patterning with Liu–Nealey chemoepitaxy on a 14-nm dynamic random access memory (DRAM) process. To quantify the impact of this module replacement, we investigated a key process yield metric for DRAM, interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell’s hexagonally packed capacitors patterned with an array of diblock copolymer cylinders in place of fourfold litho-etch (LE4) patterning.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Mattan Kamon, Mattan Kamon, Mustafa B. Akbulut, Mustafa B. Akbulut, Yiguang Yan, Yiguang Yan, Daniel Faken, Daniel Faken, Andras Pap, Andras Pap, Vasanth Allampalli, Vasanth Allampalli, Ken Greiner, Ken Greiner, David M. Fried, David M. Fried, } "Virtual fabrication using directed self-assembly for process optimization in a 14-nm dynamic random access memory," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 031605 (13 September 2016). https://doi.org/10.1117/1.JMM.15.3.031605 . Submission:
JOURNAL ARTICLE
11 PAGES


SHARE
Back to Top